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RJK0855DPB - 80V, 30A, 11 m max. Silicon N Channel Power MOS FET Power Switching 80V, 30A, 11 m?max. Silicon N Channel Power MOS FET Power Switching

RJK0855DPB_8208903.PDF Datasheet


 Full text search : 80V, 30A, 11 m max. Silicon N Channel Power MOS FET Power Switching 80V, 30A, 11 m?max. Silicon N Channel Power MOS FET Power Switching


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INFINEON[Infineon Technologies AG]
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500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
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500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
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Fairchild Semiconductor Corporation
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